<wallacoloo>
promach: My understanding is that the large clk-to-q is due to all the capacitance hanging of the bit line (wire cap + the drain of all the other cells on that line), plus that the devices are small and have low drive strength. So high RC = long clk-to-q.
<wallacoloo>
But DRAMs use sense amplifiers, and I'm not sure what limits those.
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